sensitron semiconductor ss22 - ss 21 0 2.0a surface mount schottky barrier rectifier data sheet 280 4 rev. ? features l schottky barrier chip l ideally suited for automatic assembly l low power loss, high efficiency l sur ge overload rating to 50a peak l for use in low voltage application l guard ring die construction l plastic case material has ul fla mmability l classification rating 94 v - o mechanical data l case: low profile molded plast ic l terminals: solder plated, solderable per mil - std - 750, method 2026 l polarity: cathode band or cathode notch l marking: type number l weight: 0.093 grams (approx.) maximum ratings and electrical characteristics @t a =25c unless otherwise specified chara cteristic symbol ss22 ss23 ss24 ss25 SS26 ss28 ss29 ss210 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 50 60 80 90 100 v rms reverse voltage v r(rms) 14 21 28 35 42 56 64 80 v average rectified output current @t l = 105c i o 2.0 a non - repetitive peak forward surge current 8.3ms single half sine - wave superimposed on rated load (jedec method) i fsm 50 a forward voltage @i f = 2.0a v fm 0.50 0.70 0.85 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 0.4 10 ma typical thermal resistance junction to ambient (note 1) r thja 75 c/w operating temperature range t j - 65 to +125 c storage temperature range t stg - 65 to +150 c note: 1. mounted on p.c. board with 8.0m m 2 copper pad areas ? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? b d a f c h g e smb/do-214aa dim min max min max a 3.30 3.94 0.130 0.155 b 4.06 4.70 0.160 0.185 c 1.91 2.11 0.075 0.083 d 0.152 0.305 0.006 0.012 e 5.08 5.59 0.2 0.220 f 2.13 2.44 0.084 0.096 g 0.051 0.203 0.002 0.008 h 0.76 1.27 0.029 0.05 in mm in inch
0.01 0.1 1.0 10 0 . 1 0. 2 0. 3 0. 4 0 . 5 0. 6 0. 7 0. 8 0. 9 1 .0 1.1 i , inst a nt aneous forw ard c urrent (a) f v , instantaneous fwd voltage (v) fig. 2 typ. forward characteristics f s s 2 2 - s s 2 4 s s 2 5 - s s 2 6 t - 25oc j i pulse width = 300 s f m 1 5 3 0 4 5 6 0 0 1 10 100 i , peak forw ard surge current (a) fsm fi g . 3 max non-repetitive peak fwd sur g e current number of cycles at 60 hz single half sine-wave (jedec method) t = 150oc j 10 100 1000 0.1 1 10 100 c , junction cap acit ance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25c f = 1 mhz j 0 20 40 60 80 100 120 140 i , inst ant aneous reverse current (ma) r percent of rated peak reverse voltage (%) fi g . 5 typical reverse characteristics t = 100oc j t = 75oc j t = 25oc j 100 10 1.0 0.1 0.01 0.001 0 1 . 0 2 . 0 25 50 75 100 125 150 i a verage for w ard current (a) (a v), t , l e ad temper a ture (oc) fig. 1 forward current derating curve l s s 2 8 - s 2 10
ss 210
? 221 west industry court deer park, ny 11729-4681 (631) 586-7600 fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? t 2 80 4
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